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Abstract
The use of Gummel–Poon and quasi–saturation models in BiCMOS switching has been evaluated. The BiCMOS transient responses at different load conditions are examined. The use of the Gummel–Poon model for BiCMOS switching does not account for the charge dynamic in the collector. The simulation result using the Gummel-Poon model could be misleading when the BiCMOS inverter device drives a big load capacitance.