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Integrated Ferroelectrics
An International Journal
Volume 14, 1997 - Issue 1-4
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Materials processing - CVD

Characteristics of ferroelectric SrBi2Ta2O9 thin films grown by “flash” MOCVD

C. Isobe Materials Research Laboratory, Sony Research Center, 174 Fujitsuka-cho, Hodogaya, Yokohama, 240, Japan
,
T. Ami Yagi Microdevices Laboratory, Sony Research Center, 4-14-1 Asahi-cho, Atsugi, Kanagawa, 243, Japan
,
K. Hironaka Yagi Microdevices Laboratory, Sony Research Center, 4-14-1 Asahi-cho, Atsugi, Kanagawa, 243, Japan
,
K. Watanabe Yagi Microdevices Laboratory, Sony Research Center, 4-14-1 Asahi-cho, Atsugi, Kanagawa, 243, Japan
,
M. Sugiyama Yagi Microdevices Laboratory, Sony Research Center, 4-14-1 Asahi-cho, Atsugi, Kanagawa, 243, Japan
,
N. Nagel Yagi Microdevices Laboratory, Sony Research Center, 4-14-1 Asahi-cho, Atsugi, Kanagawa, 243, Japan
,
K. Katori Yagi Microdevices Laboratory, Sony Research Center, 4-14-1 Asahi-cho, Atsugi, Kanagawa, 243, Japan
,
Y. Ikeda Yagi Microdevices Laboratory, Sony Research Center, 4-14-1 Asahi-cho, Atsugi, Kanagawa, 243, Japan
,
C. D. Gutleben Yagi Microdevices Laboratory, Sony Research Center, 4-14-1 Asahi-cho, Atsugi, Kanagawa, 243, Japan
,
M. Tanaka Yagi Microdevices Laboratory, Sony Research Center, 4-14-1 Asahi-cho, Atsugi, Kanagawa, 243, Japan
,
H. Yamoto Yagi Microdevices Laboratory, Sony Research Center, 4-14-1 Asahi-cho, Atsugi, Kanagawa, 243, Japan
&
H. Yagi Yagi Microdevices Laboratory, Sony Research Center, 4-14-1 Asahi-cho, Atsugi, Kanagawa, 243, Japan
 show all
Pages 95-103 | Received 18 Mar 1996, Published online: 19 Aug 2006
 
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Abstract

A chemical vapor deposition process for the ferroelectric SrBi2Ta2O9 has been developed utilizing a liquid delivery and flash vaporization technique. Uniform layered perovskite of SrBi2Ta2O9 was formed over 4 inch wafers by the chemical vapor deposition followed by annealing at 800°C in oxygen ambient. The SrBi2Ta2O9 thin film capacitors showed well saturated hysteresis loops with remanent polarization (2Pr) and coercive field (Ec) of up to 21.3 (μC/cm2) and 47.2 (kV/cm), respectively. The SrBi2Ta2O9 capacitors with platinum electrodes showed fatigue free characteristics after switching of 1×1010 cycles. The chemical vapor deposition technique demonstrated excellent conformal coating of SrBi2Ta2O9 film on 0.5 μm line-and-space patterns. These performances will meet the requirements for high-density nonvolatile memory devices.

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